发明授权
- 专利标题: X-ray mask and method for producing same
- 专利标题(中): X射线掩模及其制造方法
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申请号: US674406申请日: 1991-03-25
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公开(公告)号: US5177773A公开(公告)日: 1993-01-05
- 发明人: Hiroaki Oizumi , Kozo Mochiji , Shimpei Iijima
- 申请人: Hiroaki Oizumi , Kozo Mochiji , Shimpei Iijima
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX2-073324 19900326
- 主分类号: G03F1/22
- IPC分类号: G03F1/22
摘要:
An X-ray mask comprises an absorber pattern composed of a material capable of absorbing X-ray, a mask substrate for supporting the absorber pattern, composed of a material capable of transmitting X-ray, and a support frame for supporting the mask substrate, wherein the mask substrate is composed of a mask substrate material whose impurity content is suppressed to reduce positional distortions generated by X-ray radiation. Generation of positional distortions by X-ray exposure is inhibited and an arrangement of mask pattern can be ensured with a high precision.