发明授权
- 专利标题： Process for chemical vapor deposition of main group metal nitrides
- 专利标题（中）： 主要金属氮化物的化学气相沉积工艺
-
申请号： US790576申请日： 1991-11-08
-
公开(公告)号： US5178911A公开(公告)日： 1993-01-12
- 发明人: Roy G. Gordon , David Hoffman , Umar Riaz
- 申请人： Roy G. Gordon , David Hoffman , Umar Riaz
- 申请人地址： MA Cambridge
- 专利权人： The President and Fellows of Harvard College
- 当前专利权人： The President and Fellows of Harvard College
- 当前专利权人地址： MA Cambridge
- 主分类号： C23C16/34
- IPC分类号： C23C16/34
摘要：
A process for depositing a thin film of a main group metal nitride, e.g., AlN, GaN or Sn.sub.3 N.sub.4, is provided. The vapors of a main group metal amido compound are mixed with ammonia gas and allowed to react near a substrate heated to a temperature in the range of 100.degree. C. to 400.degree. C. resulting in deposition of a film on the substrate.
公开/授权文献
- US6056399A Interchangeable nosepiece system 公开/授权日：2000-05-02