发明授权
- 专利标题： Semiconductor substrate having a superconducting thin film with a buffer layer in between
- 专利标题（中）： 半导体衬底具有介于其间的缓冲层的超导薄膜
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申请号： US726124申请日： 1991-07-02
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公开(公告)号： US5179070A公开(公告)日： 1993-01-12
- 发明人: Keizo Harada , Hideo Itozaki , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
- 申请人： Keizo Harada , Hideo Itozaki , Naoji Fujimori , Shuji Yazu , Tetsuji Jodai
- 申请人地址： JPX
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX63-108498 19880430; JPX63-109323 19880502; JPX63-109324 19880502; JPX63-110011 19880506; JPX63-110012 19880506; JPX63-110013 19880506; JPX63-110014 19880506; JPX63-110015 19880506; JPX63-110016 19880506; JPX63-110017 19880506; JPX63-110018 19880506; JPX63-110019 19880506; JPX63-110020 19880506; JPX63-110021 19880506; JPX63-110022 19880506; JPX63-110023 19880506; JPX63-110024 19880506; JPX63-110025 19880506; JPX63-249425 19881003
- 主分类号： H01L39/24
- IPC分类号： H01L39/24
摘要：
A semiconductor substrate such as silicon single crystal having a thin film of a superconducting material composed of a compound oxide whose critical temperature is higher than 30 K such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is Y or lanthanide), characterized in that a buffer layer composed of ZrO.sub.2, MgO containing or not containing metal element such as Ag is interposed between the semiconductor substrate and the superconducting thin film.
公开/授权文献
- US5895053A Seal for gas springs and the like 公开/授权日：1999-04-20
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