发明授权
- 专利标题： Method of forming a layer of doped crystalline semiconductor alloy material
- 专利标题（中）： 形成掺杂晶体半导体合金材料层的方法
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申请号： US551684申请日： 1990-07-09
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公开(公告)号： US5180690A公开(公告)日： 1993-01-19
- 发明人: Wolodymyr Czubatyj , Stanford R. Ovshinsky , Guy C. Wicker , David Beglau , Ronald Himmler , David Jablonski , Subhendu Guha
- 申请人： Wolodymyr Czubatyj , Stanford R. Ovshinsky , Guy C. Wicker , David Beglau , Ronald Himmler , David Jablonski , Subhendu Guha
- 申请人地址： MI Troy
- 专利权人： Energy Conversion Devices, Inc.
- 当前专利权人： Energy Conversion Devices, Inc.
- 当前专利权人地址： MI Troy
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/205 ; H01L21/336 ; H01L29/45 ; H01L29/786
摘要：
A method for the low temperature fabrication of doped polycrystalline semiconductor alloy material. The method includes the steps of exposing a body of semiconductor alloy material to a reaction gas containing at least a source of the dopant element, and establishing an electrical potential sufficient to sputter etch the surface of said layer, while decomposing the reaction gas. This allows for the deposition of a layer of doped amorphous semiconductor alloy material upon the body of semiconductor alloy material. Thereafter, the doped layer of amorphous semiconductor alloy material is exposed to an annealing environment sufficient to at least partially crystallize said amorphous material, and activate the dopant element.