发明授权
US5181091A Integrated circuit with improved protection against negative transients 失效
集成电路具有改进的防止负瞬变的保护

Integrated circuit with improved protection against negative transients
摘要:
A battery-backed integrated circuit, with a double diode structure connected to signal lines. In the double diode structure, a first junction is three-dimensionally enclosed by a second junction, so that minority carriers generated at the first junction will be collected at the second junction. Thus, when a negative transient voltage appears on the signal line, the first junction can be forward biassed to source the needed current from ground, with minimal minority carrier injection.
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