发明授权
US5181091A Integrated circuit with improved protection against negative transients
失效
集成电路具有改进的防止负瞬变的保护
- 专利标题: Integrated circuit with improved protection against negative transients
- 专利标题(中): 集成电路具有改进的防止负瞬变的保护
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申请号: US760411申请日: 1991-09-16
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公开(公告)号: US5181091A公开(公告)日: 1993-01-19
- 发明人: Thomas E. Harrington, III , Robert D. Lee
- 申请人: Thomas E. Harrington, III , Robert D. Lee
- 申请人地址: TX Dallas
- 专利权人: Dallas Semiconductor Corp.
- 当前专利权人: Dallas Semiconductor Corp.
- 当前专利权人地址: TX Dallas
- 主分类号: H01L27/02
- IPC分类号: H01L27/02 ; H02J7/00 ; H02J9/06
摘要:
A battery-backed integrated circuit, with a double diode structure connected to signal lines. In the double diode structure, a first junction is three-dimensionally enclosed by a second junction, so that minority carriers generated at the first junction will be collected at the second junction. Thus, when a negative transient voltage appears on the signal line, the first junction can be forward biassed to source the needed current from ground, with minimal minority carrier injection.
公开/授权文献
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