发明授权
US5182229A Method for diffusing an n type impurity from a solid phase source into a
III-V compound semiconductor
失效
将固体相源N型损耗扩散到III-V族化合物半导体中的方法
- 专利标题： Method for diffusing an n type impurity from a solid phase source into a III-V compound semiconductor
- 专利标题（中）： 将固体相源N型损耗扩散到III-V族化合物半导体中的方法
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申请号： US798740申请日： 1991-11-27
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公开(公告)号： US5182229A公开(公告)日： 1993-01-26
- 发明人: Satoshi Arimoto
- 申请人： Satoshi Arimoto
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-335830 19901128
- 主分类号： C30B31/02
- IPC分类号： C30B31/02 ; H01L21/18 ; H01L21/225
摘要：
A method for diffusing n type impurities from a solid phase source into a III-V compound semiconductor includes depositing an amorphous or polycrystalline selenium or sulfur film on the III-V compound semiconductor and diffusing selenium or sulfur from the film into the compound semiconductor by annealing. Highly controllable diffusion of n type impurities in a high concentration is achieved.
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