发明授权
- 专利标题: In-situ real-time sheet resistance measurement method
- 专利标题(中): 原位实时薄片电阻测量方法
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申请号: US752742申请日: 1991-08-30
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公开(公告)号: US5184398A公开(公告)日: 1993-02-09
- 发明人: Mehrdad M. Moslehi
- 申请人: Mehrdad M. Moslehi
- 申请人地址: TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: TX Dallas
- 主分类号: C23C16/458
- IPC分类号: C23C16/458 ; C23C16/52 ; H01L21/66 ; H01L21/683
摘要:
A system 20 for measuring the sheet resistance of a conductive layer on the top surface of a semiconductor wafer 22 is disclosed herein. In one embodiment, the system includes a chuck 30 electrically coupled to the backside surface of the wafer 22. The chuck 30 is capable of supporting the wafer 22 electrostatically. A signal source 40 provides an excitation signal to the wafer 22 and circuitry for monitoring an induced signal is provided. The sheet resistance on the top surface of the wafer 22 is determined from the measurements of the excitation and induced electrical signals. Other systems and methods are also disclosed.
公开/授权文献
- US5645646A Susceptor for deposition apparatus 公开/授权日:1997-07-08
信息查询
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