发明授权
- 专利标题: Capacitor and method of manufacturing the same
- 专利标题(中): 电容器及其制造方法
-
申请号: US897291申请日: 1992-06-11
-
公开(公告)号: US5187639A公开(公告)日: 1993-02-16
- 发明人: Kazufumi Ogawa , Mamoru Soga , Norihisa Mino
- 申请人: Kazufumi Ogawa , Mamoru Soga , Norihisa Mino
- 申请人地址: JPX Kadoma
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Kadoma
- 优先权: JPX3-143498 19910614
- 主分类号: B32B7/10
- IPC分类号: B32B7/10 ; H01G4/14 ; H01G4/18 ; H01G4/20 ; H01G4/33
摘要:
A monomolecularfilm which can be used as a dielectric film is obtained on a substrate surface. For example, an aluminum foil electrode substrate having a natural oxide film is obtained by chemically adsorbing a chlorosilane-based surface active material comprising a fluorocarbon chain to the substrate. It is possible in this invention to have a pre-treatment as follows in lieu of using the natural oxide layer: forming an electrolytic oxidated layer by electrolytic oxidation of the metallic film, or bonding a thin oxide layer such as SiO.sub.2, Al.sub.2 O.sub.3 being several hundred nanometers in thickness to the surface metallic film by spatter deposition, thus obtaining an excellent capacitor. A capacitor can be obtained by deposition of the aluminum layer on the surface bilayer laminated film. A thin film capacitor which has a high volume can be obtained comprising a thin (nanometer level), substantially pinhole-free dielectric film by using a siloxane-based monomolecular film having a fluorocarbon chain as the dielectric film.
公开/授权文献
- US5854708A Anti-fog element 公开/授权日:1998-12-29
信息查询