发明授权
- 专利标题： Method of producing high-strength .beta.-type silicon carbide sintered bodies
- 专利标题（中）： 生产高强度β型碳化硅烧结体的方法
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申请号： US768337申请日： 1991-09-30
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公开(公告)号： US5192719A公开(公告)日： 1993-03-09
- 发明人: Hidetoshi Yamauchi , Haruhisa Hasegawa , Yasuji Hiramatsu
- 申请人： Hidetoshi Yamauchi , Haruhisa Hasegawa , Yasuji Hiramatsu
- 申请人地址： JPX
- 专利权人： Ibiden Co., Ltd.
- 当前专利权人： Ibiden Co., Ltd.
- 当前专利权人地址： JPX
- 主分类号： C04B35/565
- IPC分类号： C04B35/565
摘要：
A high-density and high-strength .beta.-type silicon carbide sintered body, in which crystal grains are made uniform and fine by adjusting the compounding ratio of the sintering aid and further taking a special means at the sintering step while suppressing the inclusion of .alpha.-SiC into the starting powder as far as possible during the production of the silicon carbide sintered body.
公开/授权文献
- US5749014A Shutter device 公开/授权日：1998-05-05
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