发明授权
US5198071A Process for inhibiting slip and microcracking while forming epitaxial
layer on semiconductor wafer
失效
在半导体晶片上形成外延层的同时抑制滑移和微裂纹的方法
- 专利标题: Process for inhibiting slip and microcracking while forming epitaxial layer on semiconductor wafer
- 专利标题(中): 在半导体晶片上形成外延层的同时抑制滑移和微裂纹的方法
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申请号: US797614申请日: 1991-11-25
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公开(公告)号: US5198071A公开(公告)日: 1993-03-30
- 发明人: Lance Scudder , Norma Riley
- 申请人: Lance Scudder , Norma Riley
- 申请人地址: CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: CA Santa Clara
- 主分类号: C23C16/02
- IPC分类号: C23C16/02 ; C23C16/24 ; C23C16/56 ; C30B25/02 ; C30B33/00 ; H01L21/205
摘要:
A process for the formation of an epitaxial layer on a semiconductor wafer is described which inhibits the formation of thermal stress in the semiconductor wafer such as a silicon wafer, during the formation of such an epitaxial layer thereon. In one aspect, such thermal stress is inhibited during the deposition of the epitaxial material by initially reducing the deposition rate to less than 1 .mu.m per minute or lower until the epitaxial layer reaches a thickness of from about 2 to about 30 .mu.m. In another aspect of the invention, any bridge materials formed between the wafer and the wafer support, during formation of the epitaxial layer, is removed before the wafer is cooled, i.e., before such bridge materials can induce thermal stress in the wafer during the cooling of the wafer, by post etching the wafer with HCl etching gas after the epitaxial deposition.
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