发明授权
- 专利标题： Thin film phototransistor and photosensor array using the same
- 专利标题（中）： 薄膜光电晶体管和光电传感器阵列使用相同
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申请号： US803798申请日： 1991-12-09
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公开(公告)号： US5200634A公开(公告)日： 1993-04-06
- 发明人: Toshihisa Tsukada , Yoshiyuki Kaneko , Hideaki Yamamoto , Norio Koike , Ken Tsutsui , Haruo Matsumaru , Yasuo Tanaka
- 申请人： Toshihisa Tsukada , Yoshiyuki Kaneko , Hideaki Yamamoto , Norio Koike , Ken Tsutsui , Haruo Matsumaru , Yasuo Tanaka
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX63-244167 19880930; JPX1-29793 19890210; JPX1-35068 19890216; JPX1-63583 19890317; JPX1-66126 19890320
- 主分类号： H01L27/146
- IPC分类号： H01L27/146 ; H01L31/113 ; H04N1/031
摘要：
A thin film phototransistor is provided having a field effect transistor structure where at least one end of the gate electrode is not overlapped with an electrode neighboring the end. Such a thin film phototransistor has: (1) a function as a photosensor and a switching function; (2) a high input impedance; (3) a voltage control function; and (4) a high photocurrent ON/OFF ratio. This thin film phototransistor can be used independently or together with a thin film transistor for picture elements of a one-dimensional or two-dimensional photosensor array, producing satisfactory results.
公开/授权文献
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