发明授权
US5205900A Method of monitoring surface roughness of crystal, and crystal growth
equipment
失效
监测晶体表面粗糙度和晶体生长设备的方法
- 专利标题: Method of monitoring surface roughness of crystal, and crystal growth equipment
- 专利标题(中): 监测晶体表面粗糙度和晶体生长设备的方法
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申请号: US702816申请日: 1991-05-21
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公开(公告)号: US5205900A公开(公告)日: 1993-04-27
- 发明人: Kaoru Inoue , Jean C. Harmand , Toshinobu Matsuno
- 申请人: Kaoru Inoue , Jean C. Harmand , Toshinobu Matsuno
- 申请人地址: JPX
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX
- 优先权: JPX2-151998 19900611
- 主分类号: C30B23/08
- IPC分类号: C30B23/08 ; C30B23/02 ; C30B25/02 ; H01L21/203
摘要:
Changes in the formation of crystal surface roughness are monitored by making a laser beam incident on the surface of a growing crystal and detecting a reflected laser beam diffracted at the surface of the growing crystal, at a position standing apart from the optical axis of mirror face reflected light of the incident laser beam. A crystal growth equipment making use of this method is also disclosed.
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