发明授权
- 专利标题: Portable semiconductor memory unit
- 专利标题(中): 便携式半导体存储单元
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申请号: US715962申请日: 1991-06-17
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公开(公告)号: US5206783A公开(公告)日: 1993-04-27
- 发明人: Yoshihide Mori , Takayuki Shinohara
- 申请人: Yoshihide Mori , Takayuki Shinohara
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX2-217613 19900818
- 主分类号: B42D15/10
- IPC分类号: B42D15/10 ; G06K19/07 ; H05F3/02 ; H05K9/00
摘要:
A semiconductor memory unit has a card body (1) with conductive panels (2, 2') on its surface. Insulating layers (10, 10') are provided on the inside of the conductive panels (2, 2'). A circuit board (5) is provided in the card body (1). A battery contacting member (8) is located close to one of the insulating layers (10, 10'), and is connected with a circuit grounding terminal. A portion (10a) of the insulating layer (10), which is opposed to the battery contacting member (8), is formed to have lower electrostatic breakdown voltage than the other portions of the insulating layers (10, 10'). Thus, when a high voltage ESD noise is applied to the conductive panels (2, 2'), the noise is discharged to the ground through the portion (10a) of the insulating layer (10) and the battery contacting member, so that the memory unit can be free from the bad influence of the noise.
公开/授权文献
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