发明授权
- 专利标题： Semiconductor laser device with a sulfur-containing film provided between the facet and the protective film
- 专利标题（中）： 半导体激光装置具有设置在小面和保护膜之间的含硫膜
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申请号： US727375申请日： 1991-07-05
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公开(公告)号： US5208468A公开(公告)日： 1993-05-04
- 发明人: Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
- 申请人： Hidenori Kawanishi , Taiji Morimoto , Shinji Kaneiwa , Hiroshi Hayashi , Nobuyuki Miyauchi , Seiki Yano , Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Takehiro Shiomoto , Saburo Yamamoto
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX1-26414 19890203; JPX1-289705 19891106; JPX1-341890 19891229
- 主分类号： H01S5/02
- IPC分类号： H01S5/02 ; H01S5/028
摘要：
A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.
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