发明授权
- 专利标题： Lithographic apparatus and method
- 专利标题（中）： 平版印刷设备和方法
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申请号： US781879申请日： 1991-10-24
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公开(公告)号： US5209813A公开(公告)日： 1993-05-11
- 发明人: Yoshitada Oshida , Genya Matsuoka , Teruo Iwasaki , Toshio Kaneko , Hiroyuki Takahashi , Hiroyoshi Ando , Hidenori Yamaguchi , Katsuhiro Kawasaki
- 申请人： Yoshitada Oshida , Genya Matsuoka , Teruo Iwasaki , Toshio Kaneko , Hiroyuki Takahashi , Hiroyoshi Ando , Hidenori Yamaguchi , Katsuhiro Kawasaki
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-284244 19901024; JPX2-287008 19901026; JPX2-400009 19901201; JPX3-009612 19910130; JPX3-065973 19910329; JPX3-086542 19910418
- 主分类号： H01J37/304
- IPC分类号： H01J37/304 ; H01J37/317
摘要：
A lithographic method and a lithographic apparatus ar disclosed in which the height of a silicon wafer making up an object of lithography is accurately measured. A lithographic apparatus such as an electron beam apparatus having a height-measuring instrument built therein is effectively used for forming a pattern on the order of submicrons.
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