发明授权
- 专利标题: SiC thin-film thermistor
- 专利标题(中): SIC薄膜热敏电阻
-
申请号: US734691申请日: 1991-07-23
-
公开(公告)号: US5216404A公开(公告)日: 1993-06-01
- 发明人: Takeshi Nagai , Shuji Itou , Kunihiro Tsuruda
- 申请人: Takeshi Nagai , Shuji Itou , Kunihiro Tsuruda
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX2-197247 19900725; JPX3-058648 19910322
- 主分类号: H01C1/14
- IPC分类号: H01C1/14
摘要:
A thin-film thermistor element which has an electrically insulating substrate having first and second surfaces opposite to each other and also having a pair of through-holes defined therein so as to extend completely across the thickness thereof, and a pair of electrode films each including a body portion of large surface area and a generally comb-shaped portion continued outwardly from the body portion. The electrode films are formed by the use of a firing process on the first surface of the substrate with the respective comb-shaped portions thereof confronting with each other. First and second electroconductive films are also formed on respective surrounding wall faces defining the corresponding through-holes in the substrate in electrically connected relationship with the body portions of the associated electrode films. A temperature sensitive resistance film is formed by the use of a high frequency sputtering process on the first surface of the substrate so as to overlay the electrode films. A method of making the thermistor element is also disclosed.