发明授权
- 专利标题： Method for micromachining semiconductor material
- 专利标题（中）： 微电子学半导体材料的方法
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申请号： US695185申请日： 1991-05-03
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公开(公告)号： US5225377A公开(公告)日： 1993-07-06
- 发明人: John R. Hines , Ralph H. Johnson , Richard Kirkpatrick
- 申请人： John R. Hines , Ralph H. Johnson , Richard Kirkpatrick
- 申请人地址： MN Minneapolis
- 专利权人： Honeywell Inc.
- 当前专利权人： Honeywell Inc.
- 当前专利权人地址： MN Minneapolis
- 主分类号： G01L9/00
- IPC分类号： G01L9/00
摘要：
A structure is formed from two layers of material having opposite conductivity types. A first region is formed within the structure, and extends at least in part into a layer to be etched. A surface of the structure is then masked and etched. The result is a microstructure which varies with the conductivity type and geometry of the region formed and etchant used.
公开/授权文献
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