发明授权
- 专利标题: Plasma ashing apparatus
- 专利标题(中): 等离子灰化设备
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申请号: US757766申请日: 1991-09-11
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公开(公告)号: US5228052A公开(公告)日: 1993-07-13
- 发明人: Masashi Kikuchi , Richard L. Bersin , Masaki Uematsu
- 申请人: Masashi Kikuchi , Richard L. Bersin , Masaki Uematsu
- 申请人地址: JPX Chigasaki
- 专利权人: Nihon Shinku Gijutsu Kabushiki Kaisha
- 当前专利权人: Nihon Shinku Gijutsu Kabushiki Kaisha
- 当前专利权人地址: JPX Chigasaki
- 主分类号: H01J37/32
- IPC分类号: H01J37/32
摘要:
A plasma ashing apparatus has a vacuum treatment chamber for receiving therein a substrate coated with a resist film, a reactive gas introduction pipe equipped with a plasma applicator, a vacuum exhaust pipe, a heating means for heating the substrate, and two pieces of electrodes disposed in parallel to each other. One of the electrodes is a substrate electrode and the other thereof is a circular counter electrode. These two electrodes are commonly connected to an RF power source to thereby constitute a cathode electrode. Multiple concentric perforations are formed in the counter electrode except for a rib portion. A central perforation is formed in the center of the counter electrode. The concentric perforations are formed at every distance, from the center, equivalent to a diameter of the central perforation, while leaving circular electrode surfaces corresponding in width to a radius of of the perforation.
公开/授权文献
- US5811369A Thermal recording medium 公开/授权日:1998-09-22
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