发明授权
US5234793A Method for dimensionally accurate structure transfer in bilayer
technique wherein a treating step with a bulging agent is employed
after development
失效
在双层技术中尺寸精确的结构转移的方法,其中在显影后使用具有膨胀剂的处理步骤
- 专利标题: Method for dimensionally accurate structure transfer in bilayer technique wherein a treating step with a bulging agent is employed after development
- 专利标题(中): 在双层技术中尺寸精确的结构转移的方法,其中在显影后使用具有膨胀剂的处理步骤
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申请号: US513965申请日: 1990-04-24
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公开(公告)号: US5234793A公开(公告)日: 1993-08-10
- 发明人: Michael Sebald , Recai Sezi , Rainer Leuschner , Siegfried Birkle , Hellmut Ahne
- 申请人: Michael Sebald , Recai Sezi , Rainer Leuschner , Siegfried Birkle , Hellmut Ahne
- 申请人地址: Munich
- 专利权人: Siemens Aktiengesellschaft
- 当前专利权人: Siemens Aktiengesellschaft
- 当前专利权人地址: Munich
- 优先权: DEX3913432 19890424
- 主分类号: G03F7/26
- IPC分类号: G03F7/26 ; G03F7/40 ; H01L21/027
摘要:
A photolithographic method for structure generation in bilayer processes is provided. Pursuant to the method, a dimensional reserve is produced in a top resist structure by chemical treatment with a bulging agent. The expansion preferably is performed by treatment with an aqueous solution. The expansion can be set such that the dimensional loss to be anticipated in further etchings of the bottom resist or, respectively, of the wafer is exactly compensated for.
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