发明授权
- 专利标题: Optimized helical resonator for plasma processing
- 专利标题(中): 用于等离子体处理的优化螺旋谐振器
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申请号: US879663申请日: 1992-05-06
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公开(公告)号: US5241245A公开(公告)日: 1993-08-31
- 发明人: Michael S. Barnes , Dennis K. Coultas , John G. Forster , John H. Keller
- 申请人: Michael S. Barnes , Dennis K. Coultas , John G. Forster , John H. Keller
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: H05H1/46
- IPC分类号: H05H1/46 ; B01J19/08 ; C23C16/50 ; C23F4/00 ; H01J37/32 ; H01L21/205 ; H01L21/302 ; H01L21/3065 ; H01P7/00
摘要:
An optimized helical resonator which increases the plasma density for efficient processing of semiconductor wafers is characterized by a low inductance and, hence, a low Q. A first embodiment uses either a distributed or lumped capacitance to reduce the value of .omega.L to less than about 200 Ohms. A second embodiment uses a flat spiral coil having a low value of .omega.L and resonant as a 1/4 or 1/2 wave resonator. A third embodiment combines features of the first two embodiments using both spiral and solenoid coils as the helical resonator.
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