Invention Grant
- Patent Title: Optimized helical resonator for plasma processing
- Patent Title (中): 用于等离子体处理的优化螺旋谐振器
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Application No.: US879663Application Date: 1992-05-06
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Publication No.: US5241245APublication Date: 1993-08-31
- Inventor: Michael S. Barnes , Dennis K. Coultas , John G. Forster , John H. Keller
- Applicant: Michael S. Barnes , Dennis K. Coultas , John G. Forster , John H. Keller
- Applicant Address: NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: NY Armonk
- Main IPC: H05H1/46
- IPC: H05H1/46 ; B01J19/08 ; C23C16/50 ; C23F4/00 ; H01J37/32 ; H01L21/205 ; H01L21/302 ; H01L21/3065 ; H01P7/00
Abstract:
An optimized helical resonator which increases the plasma density for efficient processing of semiconductor wafers is characterized by a low inductance and, hence, a low Q. A first embodiment uses either a distributed or lumped capacitance to reduce the value of .omega.L to less than about 200 Ohms. A second embodiment uses a flat spiral coil having a low value of .omega.L and resonant as a 1/4 or 1/2 wave resonator. A third embodiment combines features of the first two embodiments using both spiral and solenoid coils as the helical resonator.
Public/Granted literature
- US6129598A Printed-circuit-board (PCB) in a power supply system includes integrated cable connection terminals Public/Granted day:2000-10-10
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