Invention Grant
- Patent Title: Process for thermal-etching treatment of compound semiconductor substrate used in molecular beam epitaxy and apparatus for performing same
- Patent Title (中): 用于分子束外延中使用的化合物半导体衬底的热蚀刻处理方法及其执行装置
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Application No.: US831655Application Date: 1992-02-07
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Publication No.: US5248376APublication Date: 1993-09-28
- Inventor: Junji Saito
- Applicant: Junji Saito
- Applicant Address: JPX Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JPX Kawasaki
- Priority: JPX60-068460 19850402
- Main IPC: C30B23/02
- IPC: C30B23/02 ; H01L21/20 ; H01L21/203 ; H01L21/263 ; H01L21/324
Abstract:
A process for the thermal-etching treatment of a GaAs substrate subjected to molecular beam epitaxy, which includes: heating the GaAs substrate above a temperature of 750.degree. C., at which temperature both Ga and As are eliminated from the GaAs substrate, while irradiating the GaAs substrate with an As molecular beam. After the heating and irradiating is complete contamination adhering to the GaAs substrate by eliminating a part of the underlying GaAs. The process can be performed by an apparatus which includes a prechamber and a growth chamber for growing an epitaxial layer.
Public/Granted literature
- US6024359A Sheet stacking techniques Public/Granted day:2000-02-15
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