发明授权
US5258952A Semiconductor memory with separate time-out control for read and write
operations
失效
半导体存储器具有单独的超时控制,用于读写操作
- 专利标题: Semiconductor memory with separate time-out control for read and write operations
- 专利标题(中): 半导体存储器具有单独的超时控制,用于读写操作
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申请号: US627236申请日: 1990-12-14
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公开(公告)号: US5258952A公开(公告)日: 1993-11-02
- 发明人: Thomas A. Coker , David C. McClure
- 申请人: Thomas A. Coker , David C. McClure
- 申请人地址: TX Carrollton
- 专利权人: SGS-Thomson Microelectronics, Inc.
- 当前专利权人: SGS-Thomson Microelectronics, Inc.
- 当前专利权人地址: TX Carrollton
- 主分类号: G11C11/41
- IPC分类号: G11C11/41 ; G11C7/22 ; G11C8/18 ; G11C7/00
摘要:
A read/write memory having timed-out control of certain of its peripheral circuitry is disclosed. The control circuit for controlling the time at which time-out is to occur includes two delay stages of different lengths. The shorter delay stage is used to define the time-out in a read operation, and the longer delay stage is used to define the time-out in a write operation, since a read operation can generally be accomplished sooner than a write operation. Enabling of the periphery is controlled by an address transition detection circuit, and by a data transition detection circuit. The circuit includes a short path by which enabling of the periphery is performed responsive to a data transition in the absence of an address transition, in order to perform a late write operation.
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