发明授权
US5268312A Method of forming isolated wells in the fabrication of BiCMOS devices
失效
在BiCMOS器件制造中形成隔离阱的方法
- 专利标题： Method of forming isolated wells in the fabrication of BiCMOS devices
- 专利标题（中）： 在BiCMOS器件制造中形成隔离阱的方法
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申请号： US964700申请日： 1992-10-22
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公开(公告)号： US5268312A公开(公告)日： 1993-12-07
- 发明人: Robert H. Reuss , David J. Monk , Christopher P. Dragon
- 申请人： Robert H. Reuss , David J. Monk , Christopher P. Dragon
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： H01L21/761
- IPC分类号： H01L21/761 ; H01L21/8249 ; H01L27/06 ; H01L21/266
摘要：
A junction isolated P-well is formed for high performance BiCMOS. Two dopants of opposite conductivity types are implanted and co-diffused inside an annular N-type region to form a narrow N-type buried layer positioned between two P-type regions. N-type buried layer is formed having P-type doped regions above and below the N-type buried layer so that the N-type buried layer is narrow. The P-type region above the N-type buried layer provides for a retrograde profile of the P-well formed above it. Besides the P-well isolation, the P-type region below the N-type buried layer acts as a ground plane which collects noise, which helps to prevent it from being coupled to other devices of the BiCMOS circuit.
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