发明授权
- 专利标题： Method of forming a light emitting diode
- 专利标题（中）： 形成发光二极管的方法
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申请号： US982525申请日： 1992-11-27
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公开(公告)号： US5270245A公开(公告)日： 1993-12-14
- 发明人: Craig A. Gaw , Chan-Long Shieh
- 申请人： Craig A. Gaw , Chan-Long Shieh
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L33/00 ; H01L33/02 ; H01L33/38 ; H01L33/40 ; H01L21/20 ; H01L21/203
摘要：
A method of forming a III-V semiconductor device (10, 20) utilizes a III-V semiconductor substrate (11) having a plurality of III-V semiconductor layers (12, 14, 15, 16, 17). A pattern layer ( 19, 24) is formed on the plurality of layers (12, 14, 15, 16, 17). The plurality of III-V semiconductor layers (12, 14, 15, 16, 17) is etched with an isotropic etch that does not etch the pattern layer (19, 24). The isotropic etch undercuts the pattern layer (19, 24) and exposes an area for forming ohmic contacts on the plurality of III-V semiconductor layers. The pattern layer (19, 24) is used as a mask while depositing ohmic contact material (22, 23, 28) onto the area for forming ohmic contacts.
公开/授权文献
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