发明授权
- 专利标题： Superconducting device
- 专利标题（中）： 超导装置
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申请号： US796885申请日： 1991-11-25
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公开(公告)号： US5272358A公开(公告)日： 1993-12-21
- 发明人: Toshikazu Nishino , Ushio Kawabe , Mutsuko Hatano
- 申请人： Toshikazu Nishino , Ushio Kawabe , Mutsuko Hatano
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX61-188449 19860813; JPX61-188451 19860813; JPX61-190520 19860815
- 主分类号： H01L39/22
- IPC分类号： H01L39/22
摘要：
In a superconducting device wherein the value of a superconducting current to flow between two superconducting electrodes provided in contact with a semiconductor is controlled by a control electrode provided between the superconducting electrodes, high impurity concentration regions are formed within the semiconductor so as to lie in contact with the superconducting electrodes and to extend to under ends of the control electrode.
公开/授权文献
- US5858271A Liquid crystal composition and liquid crystal display device 公开/授权日：1999-01-12
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