发明授权
US5273851A Electrophotographic light-receiving member having surface region with
high ratio of Si bonded to C
失效
具有与C结合的高比率的表面区域的电子照相光接收元件
- 专利标题： Electrophotographic light-receiving member having surface region with high ratio of Si bonded to C
- 专利标题（中）： 具有与C结合的高比率的表面区域的电子照相光接收元件
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申请号： US780780申请日： 1991-10-23
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公开(公告)号： US5273851A公开(公告)日： 1993-12-28
- 发明人: Tetsuya Takei , Shigeru Shirai , Hirokazu Ootoshi , Ryuji Okamura , Yasuyoshi Takai
- 申请人： Tetsuya Takei , Shigeru Shirai , Hirokazu Ootoshi , Ryuji Okamura , Yasuyoshi Takai
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-287564 19901024; JPX2-287565 19901024; JPX3-89316 19910329; JPX3-241751 19910920
- 主分类号： G03G5/08
- IPC分类号： G03G5/08 ; C23C16/30 ; G03G5/082 ; G03G5/14
摘要：
An electrophotographic light-receiving member comprises a substrate, a photoconductive layer formed on the substrate and composed of a non-single crystal material containing a base component silicon atoms and a surface layer (surface-side region) made of a non-single crystal material containing silicon, carbon and hydrogen atoms, in which the ratio of silicon atoms having at least one bond to a carbon atom in the surface layer is at least 50% of the total number of silicon atoms. The electrophotographic light-receiving member has good initial electrophotographic properties and particularly good durability under a high-humidity environment.
公开/授权文献
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