The present invention relates to a silicon nitride sintered body [wherein the composition of Si.sub.3 N.sub.4 -first aid (Y.sub.2 O.sub.3 +MgO)-second aid (at least one of Al.sub.2 O.sub.3 and AlN)] falls within a range defined by lines joining points A, B, C and D in FIG. 1, the crystal phase of the sintered body contains both .alpha.-Si.sub.3 N.sub.4 and .beta.'-sialon, and the relative density is 98% or more. This sintered body is produced by subjecting a green compact of the above-described source to primary sintering in a nitrogen gas atmosphere at 1300 to 1700.degree. C. so that the relative density reaches 96% or more, and the precipitation ratio of the .alpha.-Si.sub.3 N.sub.4 crystal phases to the .beta.'-sialon crystal phase in the sintered body is in the range of from 40:60 to 80:20; and then subjecting the primary sintered body to secondary sintering in a nitrogen gas atmosphere at 1300 to 1700.degree. C. so that the relative density reaches 98% or more. The sintered body has superior strength properties, especially at ordinary temperatures, and can be produced with a high productivity in a high yield at a low cost.