发明授权
- 专利标题： Pressure engagement structure for a full press-pack type semiconductor device
- 专利标题（中）： 全压制型半导体器件的压力接合结构
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申请号： US888656申请日： 1992-05-27
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公开(公告)号： US5278434A公开(公告)日： 1994-01-11
- 发明人: Kazuhiko Niwayama
- 申请人： Kazuhiko Niwayama
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-127370 19910530
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L23/051 ; H01L23/48 ; H01L23/02
摘要：
Coned disc springs (84, 86) lie between a gate extracting electrode (80G) held in a ringlike recess (63) of an external cathode electrode (60K) and a bottom surface of the ringlike recess (63). A semiconductor body (30) is pressed against an anode distortion buffering plate (50A) by a urging force of the coned disc springs (84, 86) for vertical positional fixation of the semiconductor body (30). This enables the semiconductor body to be prevented from damages and deformation in a full press-pack type semiconductor device.
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