发明授权
US5281541A Method for repairing an electrically short-circuited semiconductor
device, and process for producing a semiconductor device utilizing said
method
失效
用于修复电短路的半导体器件的方法,以及利用所述方法制造半导体器件的工艺
- 专利标题: Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method
- 专利标题(中): 用于修复电短路的半导体器件的方法,以及利用所述方法制造半导体器件的工艺
-
申请号: US755439申请日: 1991-09-05
-
公开(公告)号: US5281541A公开(公告)日: 1994-01-25
- 发明人: Keishi Saito , Tatsuyuki Aoike , Mitsuyuki Niwa , Toshimitsu Kariya , Yuzo Koda
- 申请人: Keishi Saito , Tatsuyuki Aoike , Mitsuyuki Niwa , Toshimitsu Kariya , Yuzo Koda
- 申请人地址: JPX Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX2-235851 19900907
- 主分类号: H01L21/28
- IPC分类号: H01L21/28 ; H01L31/0224 ; H01L31/0392 ; H01L31/20 ; H01L21/306
摘要:
A method for repairing a defective semiconductor device, the defective semiconductor device including a semiconductor thin film and a conductive thin film, disposed in the named order, on a conductive surface of a substrate, such that the conductive thin film and the conductive surface of the substrate are electrically short-circuited at a pinhole occurring in the semiconductor thin film to form an electrically short-circuited portion. The method includes the steps of applying desired a voltage through an electrode positioned above a surface of the defective semiconductor device, and moving the electrode along the surface of the defective semiconductor device while maintaining a distance between the electrode and the conductive thin film sufficient to allow a discharge to occur when the electrode is above the electrically short-circuited portion, such that the discharge modifies a region of the conductive thin film which is in electrical contact with the conductive surface of the substrate, to establish an electrically noncontacted state between the conductive thin film and the conductive surface of the substrate.
公开/授权文献
- US4636317A Recycling of metalworking fluids 公开/授权日:1987-01-13