发明授权
- 专利标题: Address input buffer circuit for a semi-conductor storage device
- 专利标题(中): 半导体存储设备的地址输入缓冲电路
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申请号: US728145申请日: 1991-07-10
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公开(公告)号: US5283765A公开(公告)日: 1994-02-01
- 发明人: Jong H. Oh
- 申请人: Jong H. Oh
- 申请人地址: KRX Ichonkun
- 专利权人: Hyundai Electronics Industries Co., Ltd.
- 当前专利权人: Hyundai Electronics Industries Co., Ltd.
- 当前专利权人地址: KRX Ichonkun
- 优先权: KRX1990/10590 19900712
- 主分类号: G11C11/408
- IPC分类号: G11C11/408 ; G11C8/06 ; H01L27/10 ; H03K17/04 ; H03K19/0175 ; G11C8/00
摘要:
An address input buffer circuit for a semi-conductor storage device, comprising an input circuit 62 being controlled by an external input address signal An, an internal reference voltage signal Vref and a setup enable signal .phi.AXE; a setup circuit 63 connected to both stages of said input circuit 62; a sense amplifying circuit 61 connected to both stages of said setup circuit 63; a pair of charging circuits 67 and 68 connected to said both stages of said setup circuit 63 respectively and to a power source; a pair of hold circuits 64 and 65 connected to said both stages of said setup circuit 63 respectively; a drive circuit 66 connected to said sense amplifying circuit 61; and an output circuit 71 connected to said pair of hold circuits 64 and 65. Therefore, the address input buffer circuit for the semi-conductor storage device according to the present invention is capable of realizing a high speed operation by directly performing an address setup operation in order to remove the setup time period and therefore to shorten the access time period.
公开/授权文献
- US5775437A Working vehicle 公开/授权日:1998-07-07