A semiconductor device (20) makes contact between a first metal line (22) and an overlying second metal line (24) without the need for a conductive landing pad. Sidewall spacers (30) are formed adjacent sides of metal lines (22) such that during formation of a via (34) in an overlying dielectric layer (32), the sidewall spacer prevent trenching of underlying dielectric layer (28) if the via is misaligned. The sidewall spacers are formed of a dielectric material which has an etch rate which is significantly slower than the etch rate of dielectric layer (32). In another embodiment, portions of the sidewall spacers are selectively removed prior to depositing a second metal layer (42). Upon depositing the second metal layer, the side of metal line (22) is locally clad with the second metal to increase contact area and lowering contact resistance.