发明授权
- 专利标题: Semiconductor memory
- 专利标题(中): 半导体存储器
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申请号: US836023申请日: 1992-02-14
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公开(公告)号: US5287318A公开(公告)日: 1994-02-15
- 发明人: Masaru Kuki , Yukio Kitaguchi
- 申请人: Masaru Kuki , Yukio Kitaguchi
- 申请人地址: JPX Osaka
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JPX Osaka
- 优先权: JPX3-21879 19910215
- 主分类号: G11C17/00
- IPC分类号: G11C17/00 ; G11C16/16 ; G11C29/00 ; G11C29/12 ; G11C29/34 ; H01L21/8247 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; G11C7/00 ; G11C16/00
摘要:
In a flash-type electrically erasable programmable read-only memory (EEPROM), the erasure block decoder provided in the row decoder outputs a signal for simultaneously driving half the erasure line drivers in the erasure line driver array, or a signal for simultaneously driving the other half of the erasure line drivers in the erasure line driver array, according to an externally applied address signal. Therefore, the erasure operation test of all the blocks corresponding one-to-one to the erasure line drivers can be completed in two erasure operations, one for each corresponding half of the memory.
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