发明授权
US5287318A Semiconductor memory 失效
半导体存储器

Semiconductor memory
摘要:
In a flash-type electrically erasable programmable read-only memory (EEPROM), the erasure block decoder provided in the row decoder outputs a signal for simultaneously driving half the erasure line drivers in the erasure line driver array, or a signal for simultaneously driving the other half of the erasure line drivers in the erasure line driver array, according to an externally applied address signal. Therefore, the erasure operation test of all the blocks corresponding one-to-one to the erasure line drivers can be completed in two erasure operations, one for each corresponding half of the memory.
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