发明授权
- 专利标题： Semiconductor pressure sensor
- 专利标题（中）： 半导体压力传感器
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申请号： US756223申请日： 1991-09-09
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公开(公告)号： US5289721A公开(公告)日： 1994-03-01
- 发明人: Yukihiko Tanizawa , Hiroshi Okada , Kazuhisa Ikeda , Tsuyoshi Fukada
- 申请人： Yukihiko Tanizawa , Hiroshi Okada , Kazuhisa Ikeda , Tsuyoshi Fukada
- 申请人地址： JPX Kariya
- 专利权人： Nippondenso Co., Ltd.
- 当前专利权人： Nippondenso Co., Ltd.
- 当前专利权人地址： JPX Kariya
- 优先权： JPX2-240343 19900910; JPX3-088614 19910419
- 主分类号： G01L9/00
- IPC分类号： G01L9/00 ; G01L7/08 ; G01L9/06
摘要：
A semiconductor pressure sensor comprises a silicon substrate having a surface orientation of substantially (110), a diaphragm formed from the substrate, strain gauges disposed on the diaphragm, and a base joined with the substrate. The diaphragm has an octagonal shape whose sides are orthogonal to axis , , and , respectively. This sensor causes substantially no output error and no fluctuation between output characteristics of the strain gauges irrespective of a change in temperature.
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