发明授权
- 专利标题: Read circuit of dynamic random access memory
- 专利标题(中): 动态随机存取存储器的读电路
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申请号: US798173申请日: 1991-11-26
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公开(公告)号: US5291450A公开(公告)日: 1994-03-01
- 发明人: Atsuhi Fujiwara , Hiroyuki Yamauchi
- 申请人: Atsuhi Fujiwara , Hiroyuki Yamauchi
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX2-332502 19901128
- 主分类号: G11C11/409
- IPC分类号: G11C11/409 ; G11C7/10 ; G11C11/401 ; G11C11/4096 ; G11C11/419 ; G11C7/00
摘要:
In a dynamic random access memory including a plurality of memory read circuit arrays, a sense amplifier has a circuit wherein a first switch (or a pair of first switches) and a pair of second switches connected in series to the first switch are connected between the common data lines and the common source line of a second precharger. The first switch is controlled according to the potential of the bit lines precharged by a first precharger, while the second switches are controlled according to the address signal. Further, a third switch is provided to connect the common source line to an activation potential for the common source line in the memory array not selected. A second precharger precharges the common source line in a memory array not selected to a second precharge potential and the common data lines in a memory array not selected to a third precharge potential during the time when the common source line and the common data lines are not selected. The first, second and the third precharge potentials are set so as to prevent a through current through the third switch. Alternatively, the third switch may be omitted by providing appropriate precharge potentials.
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