发明授权
- 专利标题: Processing method for growing thick films
- 专利标题(中): 生长厚膜的加工方法
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申请号: US843987申请日: 1992-02-27
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公开(公告)号: US5298107A公开(公告)日: 1994-03-29
- 发明人: Lance A. Scudder , Norma Riley , Jon M. Schalla
- 申请人: Lance A. Scudder , Norma Riley , Jon M. Schalla
- 申请人地址: CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: CA Santa Clara
- 主分类号: H01L21/205
- IPC分类号: H01L21/205 ; C23C16/458 ; C30B25/12
摘要:
A technique for impeding the formation of mechanical bonds between workpieces, such as semiconductor wafers, and a carrier or susceptor on which they are supported during a deposition or layer formation process, such as in epitaxial processing. In the formation of relatively thick films, greater than approximately 50 microns (50 .mu.m) thick, wafers can become mechanically bonded to the susceptor on which they are supported, and are subject to damage caused by thermal stresses during a cooldown phase of processing. In the disclosed method, the speed or direction of rotation of a rotatable susceptor is abruptly changed at least once, or periodically during processing. Slight movement of the wafers with respect to the susceptor during each rotation speed change or reversal tends to break any bonds before they can develop strength, and production yields of acceptable wafers are significantly improved.
公开/授权文献
- US4139013A Threshing rotor for a combine 公开/授权日:1979-02-13