发明授权
- 专利标题： Application of electronic properties of germanium to inhibit n-type or p-type diffusion in silicon
- 专利标题（中）： 锗的电子性质的应用可以抑制硅中的n型或p型扩散
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申请号： US939982申请日： 1992-09-03
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公开(公告)号： US5298435A公开(公告)日： 1994-03-29
- 发明人: Sheldon Aronowitz , Courtney L. Hart , Sung T. Ahn
- 申请人： Sheldon Aronowitz , Courtney L. Hart , Sung T. Ahn
- 申请人地址： CA Santa Clara
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L21/22
- IPC分类号： H01L21/22 ; H01L21/265 ; H01L29/161
摘要：
A method of inhibiting dopant diffusion in silicon using germanium is provided. Germanium is distributed in substitutional sites in a silicon lattice to form two regions of germanium interposed between a region where dopant is to be introduced and a region from which dopant is to be excluded, the two germanium regions acting as a dopant diffusion barrier.
公开/授权文献
- US5798292A Method of forming wafer alignment patterns 公开/授权日：1998-08-25
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