发明授权
US5305275A Semiconductor memory device capable of correct reading of data under
variable supply voltage
失效
半导体存储器能够在可变电源电压下正确读取数据
- 专利标题： Semiconductor memory device capable of correct reading of data under variable supply voltage
- 专利标题（中）： 半导体存储器能够在可变电源电压下正确读取数据
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申请号： US913315申请日： 1992-07-15
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公开(公告)号： US5305275A公开(公告)日： 1994-04-19
- 发明人: Masayuki Yamashita , Tatsuki Furusho , Yasuhiro Kouro
- 申请人： Masayuki Yamashita , Tatsuki Furusho , Yasuhiro Kouro
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-020140 19920205
- 主分类号： G11C17/00
- IPC分类号： G11C17/00 ; G11C5/14 ; G11C7/06 ; G11C16/06 ; G11C7/00
摘要：
An improved flash EEPROM with a sense amplifier having a sensing characteristics suitable for sensing a data signal under an externally applied supply voltage Vcc in a lower range, and a sense amplifier having a sensing characteristics suitable for sensing a data signal under the supply voltage Vcc in a higher range. A Vcc level detecting device detects in which range the supply voltage Vcc is in, soasto selectively enable one of sense amplifiers. Since the data signal is amplified using the sense amplifier having the optimum sensing characteristics in accordance with the level of the supply voltage, the stored data can be accurately read.
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