发明授权
- 专利标题: Multi-chip integrated circuit module and method for fabrication thereof
- 专利标题(中): 多芯片集成电路模块及其制造方法
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申请号: US15510申请日: 1993-02-09
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公开(公告)号: US5306670A公开(公告)日: 1994-04-26
- 发明人: Larry J. Mowatt , David Walter
- 申请人: Larry J. Mowatt , David Walter
- 申请人地址: TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: TX Dallas
- 主分类号: H01L23/538
- IPC分类号: H01L23/538 ; H01L25/065 ; H05K1/18 ; H01L21/60
摘要:
A multi-chip integrated circuit module includes a supporting layer of laminate material over which a high-density interconnect structure is formed. The laminate layer includes a first upper laminate layer (10) having a hole (14) disposed therein for receiving an integrated circuit chip die (56). A lower core laminate layer (16) having a conductive layer (18) and conductive layer (20) disposed on opposite sides thereof is laminated to the lower surface of the layer (10). Plated-through holes (36), (38) and (40) are formed through the two layers (10) and (16) to connect the conductive layer (20) with a conductive layer (12) on the upper surface of the layer (10). A high-density interconnect layer includes two laminate layers (126) and (138), each having vias formed therethrough and via interconnect structures disposed on the surfaces thereof. The via interconnect structures in the layer (126) allow for connections from the die (56) to the conductive layer (12). The via interconnect structures formed in the layer (138) allow interconnection from the upper surface of layer (138) to via interconnects formed in the layer (126). An I/O connector is interfaced with select ones of the plated-through holes with pins (162) and (164). This allows an interface from the module to an operating system through pins (166).
公开/授权文献
- US5959249A Drain structure for electric connection box 公开/授权日:1999-09-28
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