发明授权
- 专利标题: Superconducting device
- 专利标题(中): 超导装置
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申请号: US875431申请日: 1992-04-29
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公开(公告)号: US5311036A公开(公告)日: 1994-05-10
- 发明人: Toshikazu Nishino , Mutsuko Miyake , Ushio Kawabe , Yutaka Harada , Masaaki Aoki , Mikio Hirano
- 申请人: Toshikazu Nishino , Mutsuko Miyake , Ushio Kawabe , Yutaka Harada , Masaaki Aoki , Mikio Hirano
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd
- 当前专利权人: Hitachi, Ltd
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX59-231308 19841105; JPX60-30366 19850220; JPX60-34355 19850225; JPX60-46539 19850311; JPX60-110371 19850524
- 主分类号: H01L21/82
- IPC分类号: H01L21/82 ; H01L39/22
摘要:
A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic.And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.
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