发明授权
- 专利标题: Selective bulk write operation
- 专利标题(中): 选择性批量写入操作
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申请号: US864481申请日: 1992-04-07
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公开(公告)号: US5311467A公开(公告)日: 1994-05-10
- 发明人: Mark A. Lysinger , William C. Slemmer , James Brady , David C. McClure
- 申请人: Mark A. Lysinger , William C. Slemmer , James Brady , David C. McClure
- 申请人地址: TX Carrollton
- 专利权人: SGS-Thomson Microelectronics, Inc.
- 当前专利权人: SGS-Thomson Microelectronics, Inc.
- 当前专利权人地址: TX Carrollton
- 主分类号: G11C11/41
- IPC分类号: G11C11/41 ; G11C8/08 ; G11C11/407 ; G11B7/00
摘要:
A memory is disclosed having a plurality of memory cells in a memory array arranged in rows and columns, each of the memory cells capable of storing a logic state therein. Each pair of bit lines is associated with one of the columns. A column decoder selects a column in the array responsive to a column address. A plurality of word line drivers selects, in response to a row address, a row of memory cells for connection with their associated pair of bit lines. A plurality of row isolation circuits isolates and enables a selected group of memory cells of each row from the remainder of the row in response to a bulk write signal. Each row isolation circuit has a conduction path between its associated word line driver and the selected memory cells in the associated row. A bulk write signal is sent to each column containing the selected memory cells. A first logic state is then written into the selected memory cells in response to the bulk write signal.
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