A booster device of the present invention which boosts a voltage applied to a semiconductor memory device, includes: a first capacitor for supplying a voltage to the semiconductor memory device; a switching transistor for providing a charging current to the first capacitor; a first control transistor for switching a state of the switching transistor between a conducting state and a non-conducting state; a second capacitor for supplying a charge to the switching transistor, whereby the switching transistor uses the charge to perform the switching; and a second control transistor for controlling the first control transistor and for supplying a charge to the second capacitor.