发明授权
- 专利标题: Manufacturing method of thin film transistor
- 专利标题(中): 薄膜晶体管的制造方法
-
申请号: US738201申请日: 1991-07-30
-
公开(公告)号: US5318919A公开(公告)日: 1994-06-07
- 发明人: Shigeru Noguchi , Satoshi Ishida , Hiroshi Iwata , Keiichi Sano
- 申请人: Shigeru Noguchi , Satoshi Ishida , Hiroshi Iwata , Keiichi Sano
- 申请人地址: JPX Moriguchi
- 专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.
- 当前专利权人地址: JPX Moriguchi
- 优先权: JPX2-203365 19900731; JPX2-203366 19900731; JPX2-223666 19900823; JPX2-240360 19900910
- 主分类号: H01L21/20
- IPC分类号: H01L21/20 ; H01L21/336 ; H01L29/786 ; H01L29/04 ; H01L29/784
摘要:
A manufacturing method of a thin film transistor, wherein a laminated body consisting of an intrinsic amorphous silicon layer and a conductive amorphous silicon layer is formed on a glass substrate, and annealed at low temperatures not higher than 600.degree. C. thereby obtaining a polycrystalline silicon film. The conductive amorphous silicon layer gives girth to a core for polycrystallization, and therefore the intrinsic amorphous silicon layer is easily recrystallized by annealing at low temperatures.
公开/授权文献
- US5725736A Tissue containing silicone betaines 公开/授权日:1998-03-10