发明授权
- 专利标题: High performance integrated circuit chip package
- 专利标题(中): 高性能集成电路芯片封装
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申请号: US819571申请日: 1992-01-07
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公开(公告)号: US5325265A公开(公告)日: 1994-06-28
- 发明人: Iwona Turlik , Arnold Reisman , Deepak Nayak , Lih-Tyng Hwang , Giora Dishon , Scott L. Jacobs , Robert F. Darveaux , Neil M. Poley
- 申请人: Iwona Turlik , Arnold Reisman , Deepak Nayak , Lih-Tyng Hwang , Giora Dishon , Scott L. Jacobs , Robert F. Darveaux , Neil M. Poley
- 申请人地址: NC Research Triangle Park NY Armonk CAX Montreal
- 专利权人: MCNC,IBM Corporation,Northern Telecom Limited
- 当前专利权人: MCNC,IBM Corporation,Northern Telecom Limited
- 当前专利权人地址: NC Research Triangle Park NY Armonk CAX Montreal
- 主分类号: H01L23/373
- IPC分类号: H01L23/373 ; H01L23/473 ; H01L23/538 ; H01L25/065 ; H05K7/20
摘要:
A high performance integrated circuit chip package includes a support substrate having conductors extending from one face to the opposite face thereof and a multilayer wiring substrate on the opposite face of the support substrate for connecting chips mounted thereon to one another and to the conductors. A heat sink includes microchannels at one face thereof, with thermally conductive cushions connecting the one face of the heat sink with the exposed back sides of the chips, to provide a high density chip package with high heat dissipation. The support substrate and heat sink may be formed of blocks of material having thermal expansion matching silicon. The cushions are a low melting point solder, preferably pure indium, and are sufficiently thick to absorb thermal stresses, but sufficiently thin to efficiently conduct heat from the chips to the heat sink.
公开/授权文献
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