发明授权
- 专利标题: Surface acoustic wave element and method of manufacturing the same
- 专利标题(中): 表面声波元件及其制造方法
-
申请号: US117226申请日: 1993-09-03
-
公开(公告)号: US5343107A公开(公告)日: 1994-08-30
- 发明人: Shinichi Shikata , Akihiro Hachigo , Hideaki Nakahata , Kenjiro Higaki
- 申请人: Shinichi Shikata , Akihiro Hachigo , Hideaki Nakahata , Kenjiro Higaki
- 申请人地址: JPX Osaka
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX4-243319 19920911
- 主分类号: H03H3/08
- IPC分类号: H03H3/08 ; H03H9/02 ; H03H9/25 ; H01L41/16
摘要:
A surface acoustic wave element has a diamond layer, a piezoelectric thin film formed on the diamond layer, and a pair of electrodes for generating a surface acoustic wave having a specific wavelength and extracting the surface acoustic wave, wherein at least one electrode is a copper electrode epitaxially grown on the surface of the diamond layer. To manufacture this surface acoustic wave element, after the diamond layer is formed on a substrate by epitaxial growth, the copper electrodes each having the predetermined shape are formed on the surface of the diamond layer by epitaxial growth. In the surface acoustic wave element having the above structure, since the copper electrodes formed on the diamond layer consist of high-quality singlecrystal copper, resistances to electromigration and stress migrations can be increased. As a result, there is provided an excellent surface acoustic wave element free from electrical defects caused by degradation and failure of the copper electrodes or free from degradation of the electrical characteristics.
公开/授权文献
- USD433598S Blender jar 公开/授权日:2000-11-14
信息查询