发明授权
US5347161A Stacked-layer structure polysilicon emitter contacted p-n junction diode
失效
堆叠层结构多晶硅发射极接触p-n结二极管
- 专利标题： Stacked-layer structure polysilicon emitter contacted p-n junction diode
- 专利标题（中）： 堆叠层结构多晶硅发射极接触p-n结二极管
-
申请号： US939244申请日： 1992-09-02
-
公开(公告)号： US5347161A公开(公告)日： 1994-09-13
- 发明人: Shye-Lin Wu , Chung-Len Lee , Tan-Fu Lei
- 申请人： Shye-Lin Wu , Chung-Len Lee , Tan-Fu Lei
- 申请人地址： TWX Taipei
- 专利权人： National Science Council
- 当前专利权人： National Science Council
- 当前专利权人地址： TWX Taipei
- 主分类号： H01L21/225
- IPC分类号： H01L21/225 ; H01L21/329 ; H01L29/45 ; H01L29/861 ; H01L23/48 ; H01L29/46
摘要：
A process is used to fabricate diodes having an emitter contacted p-n junction. A stack of n.sup.+ -type polysilicon layers are formed one upon the other upon a p-type silicon substrate. In an accordingly fabricated diode, native oxide layers that forms between the n.sup.+ -type polysilicon layer and the p-type substrate would be liable to be broken up, and thicker epitaxial layer would be formed between the same. The p-n junction is with a thickness of 0.05-0.2 .mu.m. As the diode is reverse-biased, for example at -5V, leakage current could be less than 1 n.ANG./cm.sup.2. The reverse-bias breakdown voltage could be larger than -100 V. When forward-biased, the ideality factor of the diode is close to unity.
公开/授权文献
- US6155048A Actuator for a turbocharger 公开/授权日：2000-12-05