发明授权
- 专利标题： Building and method for manufacture of integrated semiconductor circuit devices
- 专利标题（中）： 集成半导体电路器件的制造和制造方法
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申请号： US51381申请日： 1993-04-23
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公开(公告)号： US5350336A公开(公告)日： 1994-09-27
- 发明人: Hsing-Hai Chen , Hsiao-Pin Tseng , Chih-Yuan Lu
- 申请人： Hsing-Hai Chen , Hsiao-Pin Tseng , Chih-Yuan Lu
- 申请人地址： TWX Hsinchu
- 专利权人： Industrial Technology Research Institute
- 当前专利权人： Industrial Technology Research Institute
- 当前专利权人地址： TWX Hsinchu
- 主分类号： E04H5/02
- IPC分类号： E04H5/02 ; F24F3/16 ; H01L21/00 ; H01L21/02 ; H01L21/677 ; H05K13/00
摘要：
A manufacturing plant is described for producing semiconductors that will function at a low production level during the initial phase. The plant can be expanded to provide a greater production volume with minimum additional investment, minimum disruption to the existing manufacturing line, and can be done quickly at minimum cost. Also described is a method for building a manufacturing plant for integrated circuit devices that can be operated at a low level during the initial phase, and provides for an efficient and rapid expansion to a higher level of manufacturing with minimum cost, and disruption to the existing line.
公开/授权文献
- USD382273S Acoustic telephone 公开/授权日：1997-08-12
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