发明授权
US5352620A Method of making semiconductor device with memory cells and peripheral
transistors
失效
制造具有存储单元和外围晶体管的半导体器件的方法
- 专利标题: Method of making semiconductor device with memory cells and peripheral transistors
- 专利标题(中): 制造具有存储单元和外围晶体管的半导体器件的方法
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申请号: US71343申请日: 1993-06-02
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公开(公告)号: US5352620A公开(公告)日: 1994-10-04
- 发明人: Kazuhiro Komori , Kenichi Kuroda , June Sugiura
- 申请人: Kazuhiro Komori , Kenichi Kuroda , June Sugiura
- 申请人地址: JPX Chiyoda
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Chiyoda
- 优先权: JPX59-102555 19840523; JPX59-167825 19840813
- 主分类号: H01L21/28
- IPC分类号: H01L21/28 ; H01L21/8247 ; H01L27/105 ; H01L21/70
摘要:
Disclosed is a semiconductor integrated circuit device which includes first field effect transistors of an LDD structure having a floating gate as memory cells and second field effect transistors of the LDD structure as elements other than the memory cells, and which is used as EPROM. A shallow, low impurity concentration region of the first field effect transistor as a part of its source or drain region has a higher impurity concentration than a shallow, low impurity concentration region of the second field effect transistor as a part of its source or drain region.
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