发明授权
- 专利标题: Method for etching silicon
- 专利标题(中): 蚀刻硅的方法
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申请号: US151334申请日: 1993-11-12
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公开(公告)号: US5360521A公开(公告)日: 1994-11-01
- 发明人: Richard A. Davis , Mark Plagens , Uppili Sridhar
- 申请人: Richard A. Davis , Mark Plagens , Uppili Sridhar
- 申请人地址: MN Minneapolis
- 专利权人: Honeywell Inc.
- 当前专利权人: Honeywell Inc.
- 当前专利权人地址: MN Minneapolis
- 主分类号: C25F3/12
- IPC分类号: C25F3/12 ; G01L9/00 ; H01L21/3063
摘要:
A method is provided for assuring good electrical contact between a power supply and appropriate regions of silicon wafers to assure proper etching during the micromachining of the silicon die locations on the wafer. A plurality of conductors are disposed in the interstices between rows and columns of die locations and each die location that is to be etched is provided with a conductive extension connecting its relevant region with one of the interstice conductors. A preselected number of die locations are dedicated to the purpose of providing conductive pads against which contacts of a power supply can be disposed. The many interconnections between the row interstice conductors and the column interstice conductors assures good electrical distribution across the entire surface of a first side of the wafer.
公开/授权文献
- US6038656A Pipelined completion for asynchronous communication 公开/授权日:2000-03-14