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US5360521A Method for etching silicon 失效
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Method for etching silicon
摘要:
A method is provided for assuring good electrical contact between a power supply and appropriate regions of silicon wafers to assure proper etching during the micromachining of the silicon die locations on the wafer. A plurality of conductors are disposed in the interstices between rows and columns of die locations and each die location that is to be etched is provided with a conductive extension connecting its relevant region with one of the interstice conductors. A preselected number of die locations are dedicated to the purpose of providing conductive pads against which contacts of a power supply can be disposed. The many interconnections between the row interstice conductors and the column interstice conductors assures good electrical distribution across the entire surface of a first side of the wafer.
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