发明授权
- 专利标题： Magnetic thin film memory device
- 专利标题（中）： 磁性薄膜记忆装置
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申请号： US847964申请日： 1992-03-05
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公开(公告)号： US5361226A公开(公告)日： 1994-11-01
- 发明人: Motohisa Taguchi , Tatsuya Fukami , Kazuhiko Tsutsumi , Hiroshi Shibata , Shinji Tanabe , Hiroshi Kobayashi , Yuzo Ohdoi
- 申请人： Motohisa Taguchi , Tatsuya Fukami , Kazuhiko Tsutsumi , Hiroshi Shibata , Shinji Tanabe , Hiroshi Kobayashi , Yuzo Ohdoi
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-039891 19910306; JPX3-116415 19910522; JPX3-119780 19910524; JPX3-181393 19910723; JPX3-324277 19911209
- 主分类号： G11C11/14
- IPC分类号： G11C11/14 ; G11C11/18 ; H01L21/78
摘要：
A magnetic thin film memory device having information recorded in a magnetic thin film thereof by the direction of magnetization, and adapted to reproduce the recorded information on the basis of the voltage generated as a result of the change of the magnetization direction due to the extraordinary Hall effect, magnetoresistance effect or the like.A magnetic thin film memory device in which a magnetic thin film is formed of ferrimagnetic substance having perpendicular magnetic anisotropy, and producing extraordinary Hall effect in the composition of RE rich and having the minimum saturation field which enables recording in a small magnetic field and is hard to be influenced by temperatures.
公开/授权文献
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