发明授权
- 专利标题： Method of Fabricating a micro-coaxial wiring structure
- 专利标题（中）： 制造微同轴布线结构的方法
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申请号： US996210申请日： 1992-12-23
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公开(公告)号： US5363550A公开(公告)日： 1994-11-15
- 发明人: John M. Aitken , Shahzad Akbar , Billy L. Crowder , Asif Iqbal , Perwaiz Nihal
- 申请人： John M. Aitken , Shahzad Akbar , Billy L. Crowder , Asif Iqbal , Perwaiz Nihal
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01P3/06
- IPC分类号： H01P3/06 ; H01B13/20
摘要：
A method of fabricating a micro-coaxial wiring structure comprises forming a first insulation layer and patterning a trench therein. A first conductive layer is formed on the first insulation layer and having a shape conforming to the insulation layer and lining the trench. A second insulation layer is formed on the first conductive layer within the trench and having a shape conforming to the first conductive layer lining the trench. A conductive signal line having a predetermined aspect ratio for providing a desired value of resistance per unit length is formed on the second insulation layer within the trench. A third insulation layer is then formed. Lastly, a conductive shielding line is formed upon the third insulation layer, the conductive shielding line being aligned with the conductive signal line.